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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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MJH16006A
Designer'sTM Data Sheet
NPN Silicon Power Transistor
1 kV SWITCHMODE Series
These transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications. Typical Applications: Features: * * * * * * Switching Regulators Inverters Solenoids Relay Drivers Motor Controls Deflection Circuits * Collector-Emitter Voltage -- VCEV = 1000 Vdc * Fast Turn-Off Times 80 ns Inductive Fall Time -- 100_C (Typ) 120 ns Inductive Crossover Time -- 100_C (Typ) 800 ns Inductive Storage Time -- 100_C (Typ) * 100_C Performance Specified for: Reverse-Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents * Extended FBSOA Rating Using Ultra-fast Rectifiers * Extremely High RBSOA Capability
POWER TRANSISTORS 8 AMPERES 500 VOLTS 150 WATTS
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MAXIMUM RATINGS
Rating Symbol VCEO VCEV VEB IC ICM IB IBM PD Value 500 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage 1000 6 Collector Current -- Continuous -- Peak(1) Base Current -- Continuous -- Peak(1) 8 16 6 12 Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above TC = 25_C Operating and Storage Junction Temperature Range 125 50 1 Watts W/_C TJ, Tstg - 55 to 150
CASE 340D-01
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol RJC TL
Max 1
Unit
Thermal Resistance, Junction to Case
_C/W _C
Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds
275
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v10%.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer's and SWITCHMODE are trademarks of Motorola, Inc.
REV 3
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
1
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MJH16006A
(1) Pulse Test: PW = 300 s, Duty Cycle
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
SWITCHING CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS(1)
SECOND BREAKDOWN
OFF CHARACTERISTICS(1)
Resistive Load (Table 2)
Inductive Load (Table 1)
Fall Time
Storage Time
Fall Time
Storage Time
Rise Time
Delay Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
Storage Time
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 kHz)
DC Current Gain (IC = 8 Adc, VCE = 5 Vdc)
Base-Emitter Saturation Voltage (IC = 5 Adc, IB = 1 Adc) (IC = 5 Adc, IB = 1 Adc, TC = 100_C)
Collector-Emitter Saturation Voltage (IC = 3 Adc, IB = 0.6 Adc) (IC = 5 Adc, IB = 1 Adc) (IC = 5 Adc, IB = 1 Adc, TC = 100_C)
Clamped Inductive SOA with Base Reverse Biased
Second Breakdown Collector Current with Base Forward Biased
Emitter Cutoff Current (VEB = 6 Vdc, IC = 0)
Collector Cutoff Current (VCE = 1000 Vdc, RBE = 50 , TC = 100_C)
Collector Cutoff Current (VCEV = 1000 Vdc, VBE(off) = 1.5 Vdc) (VCEV = 1000 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)
Collector-Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0)
2
(IC = 5 Adc, VCC = 250 Vdc, IB1 = 0.66 Adc, PW = 30 s, Duty Cycle 2%) (IC = 5 Adc, IB1 = 0.66 Adc, VBE(off) = 5 Vdc, VCE(pk) = 400 Vdc) Characteristic
v
v 2%.
(VBE(off) = 5 Vdc)
(IB2 = 1.3 Adc, RB1 = RB2 = 4 )
(TJ = 150_C) _C)
(TJ = 100_C) _C)
VCEO(sus)
VCE(sat)
VBE(sat)
Symbol
RBSOA
Motorola Bipolar Power Transistor Device Data
IEBO ICER ICEV Cob hFE IS/b tsv tsv td ts ts tc tfi tc tfi tr tf tf Min 500 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 5 See Figure 14a or 14b 0.005 0.020 0.003 0.020 1400 1000 0.35 0.50 0.60 Typ 100 475 175 400 150 120 800 25 90 80 -- -- 8 1 1 See Figure 15 3000 2000 0.15 0.15 1.0 Max 400 700 100 300 200 350 1.5 1.5 0.7 1 1.5 1.0 -- -- -- -- -- -- -- mAdc mAdc mAdc Unit Vdc Vdc Vdc pF ns ns --
MJH16006A
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 50 hFE, DC CURRENT GAIN 30 20 10 5 3 2 1 25C TJ = 100C 10 5 3 2 1 0.5 0.3 0.2 0.1 5 IC/IB = 10 TJ = 25C
- 55C
0.2
0.3
0.5
2 3 1 5 IC, COLLECTOR CURRENT (AMPS)
10
20
0.1
0.2
1 2 3 0.3 0.5 IC, COLLECTOR CURRENT (AMPS)
5
10
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Region
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1 VBE, BASE-EMITTER VOLTAGE (VOLTS)
2 1.5 1
0.5
8A 3A 5A
IC/IB = 10 TJ = 25C IC/IB = 10 TJ = 100C
0.3 0.2 1A 0.1 0.1
0.5
0.3 0.2
0.2
0.3
0.5
1
2
3
5
10
0.2 0.3
0.5
1
2
3
5
10
IB, BASE CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector-Emitter Saturation Region
Figure 4. Base-Emitter Saturation Region
10 k Cib C, CAPACITANCE (pF) TJ = 25C
1k Cob 100
10 0.1
1 10 100 VR, REVERSE VOLTAGE (VOLTS)
850
Figure 5. Capacitance
Motorola Bipolar Power Transistor Device Data
3
MJH16006A
TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS
IC/IB1 = 5, TC = 75C, VCE(pk) = 400 V
3000 2000 t sv, STORAGE TIME (ns) VBE(off) = 0 V t sv, STORAGE TIME (ns) 3000 2000 VBE(off) = 0 V 1000 700 500 400 300 1 2 3 5 7 10 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 5V 2V
IC/IB1 = 10, TC = 75C, VCE(pk) = 400 V
2V 1000 700 500 400 300 5V
Figure 6. Storage Time
Figure 7. Storage Time
400 tfi, COLLECTOR CURRENT FALL TIME (ns) 300 0V 200 VBE(off) = 0 V 100 70 50 40 1 2 3 5 7 10 I *f = C IB1 IC, COLLECTOR CURRENT (AMPS) 5V 2V 5V 2V tfi, COLLECTOR CURRENT FALL TIME (ns)
400 300 200
VBE(off) = 0 V 100 70
2V
5V 50 40 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMPS)
Figure 8. Collector Current Fall Time
Figure 9. Collector Current Fall Time
500
500
t c , CROSSOVER TIME (ns)
2V 200
5V
t c , CROSSOVER TIME (ns)
300
300 200 2V VBE(off) = 0 V 100 70 50 5V
VBE(off) = 0 V 100 70 50 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMPS)
1
2
3
5
7
10
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Crossover Time 4
Figure 11. Crossover Time
Motorola Bipolar Power Transistor Device Data
MJH16006A
Table 1. Inductive Load Switching Drive Circuit
+15 1 F 150 100 100 F MTP8P10 MTP8P10 RB1 A MPF930 50 MUR105 MTP12N10 500 F 150 Voff *Tektronix AM503 *P6302 or Equivalent Scope -- Tektronix 7403 or Equivalent T1 (ICpk [ LcoilCC ) V T1 0V -V +V MJE210 1 F RB2 VCEO(sus) L = 10 mH RB2 = VCC = 20 Volts Inductive Switching L = 750 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 RBSOA L = 750 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 IC(pk) IC VCE(pk) VCE IB1 IB IB2 *IC T.U.T. MR918 *IB Vclamp VCC
MPF930 +10
L
A
T1 adjusted to obtain IC(pk) Note: Adjust Voff to obtain desired VBE(off) at Point A.
VCE(pk) 90% IC(pk) tfi tc tti
90% VCE(pk) IC tsv trv
I B2 , REVERSE BASE CURRENT (AMPS)
IC(pk)
8
6 IB1 = 1 A 4 0.5 A 2 IC = 5 A TJ = 25C
VCE IB
10% VCE(pk) 90% IB1
10% IC(pk) 2% IC
0 t, TIME
0
2 4 6 VBE(off), REVERSE BASE VOLTAGE (VOLTS)
8
Figure 12. Inductive Switching Measurements
Figure 13. Peak Reverse Base Current
Table 2. Resistive Load Switching
+15 H.P. 214 OR EQUIV. P.G. RB = 8.5 50
td and tr
*IB T.U.T. RL VCC *IC
ts and tf
1 F
150
100
100 F MTP8P10 MTP8P10 RB1 A
V(off) adjusted to give specified off drive
MPF930 +10 V MPF930 50 MUR105
RB2 MTP12N10
VCC Vin 0V tr 15 ns 11 V RL IC IB
250 V 50 5A 0.66 A Voff
500 F 150
MJE210 1 F
A *IB
T.U.T. *IC VCC RL
*Tektronix AM503 *P6302 or Equivalent
RL
50
Motorola Bipolar Power Transistor Device Data
5
MJH16006A
GUARANTEED SAFE OPERATING AREA LIMITS
20 IC, COLLECTOR CURRENT (AMPS)
20
100 ns
IC, COLLECTOR CURRENT (AMPS)
10 5 3 2 1
10 5 3 2 1
1 ms
10 s
TC = 25C
dc
0.5 0.3 0.2 0.1
BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN
II
0.5 0.3 0.2 0.1
REGION II -- EXPANDED FBSOA USING REGION II -- MUR8100 ULTRA-FAST REGION II -- RECTIFIER, SEE FIGURE 17
0.02 0.1
100 1000 2000 1 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.02 0.1
a. MJ16006A
Figure 14. Maximum Rated Forward Biased Safe Operating Area
IC(pk) , PEAK COLLECTOR CURRENT (AMPS)
20 POWER DERATING FACTOR (%)
100
16
80
12
60
8
IC/IB1 4 TJ 100C
40
VBE(off) = 5 V VBE(off) = 0 V
4
20
0
0
100 200 300 400 500 600 700 800 900 VCE(pk), COLLECTOR-EMITTER VOLTAGE (VOLTS)
100 0
Figure 15. Maximum Reverse Biased Safe Operating Area
+15 1 F 150 100 100 F MTP8P10 10 F MTP8P10 RB1 MPF930 +10 MPF930 50 MUR105 RB2 MTP12N10 500 F 150 Voff MJE210 1 F MUR105
Figure 17. Switching Safe Operating Area 6 Motorola Bipolar Power Transistor Device Data
EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE
100 ns TC = 25C 10 s 1 ms REGION II -- EXPANDED FBSOA USING MUR8100 ULTRA-FAST RECTIFIER, SEE FIGURE 17 dc II BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN
EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE
1 10 100 1000 2000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
a. MJH16006A
SECOND BREAKDOWN DERATING
THERMAL DERATING
0
0
40
80 120 TC, CASE TEMPERATURE (C)
160
200
Figure 16. Power Derating
VCE (1000 V MAX)
10 mH
MUR8100
MUR1100
T.U.T.
Note: Test Circuit for Ultra-fast FBSOA Note: RB2 = 0 and VOff = - 5 Volts
MJH16006A
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 23 5 t, TIME (ms) 10 20 30 50 0.05 0.02 0.01 RJC(t) = r(t) RJC RJC = 1.17 or 1C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) P(pk) D = 0.5 0.2
t1
t2
DUTY CYCLE, D = t1/t2 100 200 300 500 100 0
Figure 18. Thermal Response
SAFE OPERATING AREA INFORMATION
FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 14a and 14b is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figures 14a and 14b may be found at any case temperature by using the appropriate curve on Figure 16. T J(pk) may be calculated from the data in Figure 18. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base-to-emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 15 gives the RBSOA characteristics.
voltage. A transistor which safely dissipates 100 watts at 10 volts will typically dissipate less than 10 watts at its rated V CEO(sus). From a power handling point of view, current and voltage are not interchangeable (see Application Note AN875). 2. TURN-ON -- Safe turn-on load line excursions are bounded by pulsed FBSOA curves. The 10 s curve applies for resistive loads, most capacitive loads, and inductive loads that are clamped by standard or fast recovery rectifiers. Similarly, the 100 ns curve applies to inductive loads which are clamped by ultra- fast recovery rectifiers, and are valid for turn-on crossover times less than 100 ns (see Application Note AN952). At voltages above 75% of V CEO(sus), it is essential to provide the transistor with an adequate amount of base drive VERY RAPIDLY at turn-on. More specifically, safe operation according to the curves is dependent upon base current rise time being less than collector current rise time. As a general rule, a base drive compliance voltage in excess of 10 volts is required to meet this condition (see Application Note AN875). 3. TURN-OFF -- A bipolar transistor's ability to withstand turn-off stress is dependent upon its forward base drive. Gross overdrive violates the RBSOA curve and risks transistor failure. For this reason, circuits which use fixed base drive are often more likely to fail at light loads due to heavy overdrive (see Application Note AN875). 4. OPERATION ABOVE VCEO(sus) -- When bipolars are operated above collector-emitter breakdown, base drive is crucial. A rapid application of adequate forward base current is needed for safe turn-on, as is a stiff negative bias needed for safe turn-off. Any hiccup in the base-drive circuitry that even momentarily violates either of these conditions will likely cause the transistor to fail. Therefore, it is important to design the driver so that its output is negative in the absence of anything but a clean crisp input signal (see Application Note AN952).
SWITCHMODE III DESIGN CONSIDERATIONS
1. FBSOA -- Allowable dc power dissipation in bipolar power transistors decreases dramatically with increasing collector emitter
Motorola Bipolar Power Transistor Device Data
7
MJH16006A
SWITCHMODE DESIGN CONSIDERATIONS (Cont.)
5. RBSOA -- Reverse Biased Safe Operating Area has a first order dependency on circuit configuration and drive parameters. The RBSOA curves in this data sheet are valid only for the conditions specified. For a comparison of RBSOA results in several types of circuits (see Application Note AN951). 6. DESIGN SAMPLES -- Transistor parameters tend to vary much more from wafer lot to wafer lot, over long periods of time, than from one device to the next in the same wafer lot. For design evaluation it is advisable to use transistors from several different date codes. 7. BAKER CLAMPS -- Many unanticipated pitfalls can be avoided by using Baker Clamps. MUR105 and MUR1100 diodes are recommended for base drives less than 1 amp. Similarly, MUR405 and MUR4100 types are well-suited for higher drive requirements (see Article Reprint AR131).
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Motorola Bipolar Power Transistor Device Data
MJH16006A
PACKAGE DIMENSIONS
C B Q E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 19.00 19.60 14.00 14.50 4.20 4.70 1.00 1.30 1.45 1.65 5.21 5.72 2.60 3.00 0.40 0.60 28.50 32.00 14.70 15.30 4.00 4.25 17.50 18.10 3.40 3.80 1.50 2.00 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.749 0.771 0.551 0.570 0.165 0.185 0.040 0.051 0.058 0.064 0.206 0.225 0.103 0.118 0.016 0.023 1.123 1.259 0.579 0.602 0.158 0.167 0.689 0.712 0.134 0.149 0.060 0.078
U S K L
1 2
4
A
3
DIM A B C D E G H J K L Q S U V
D V G
J H
STYLE 1: PIN 1. 2. 3. 4.
CASE 340D-01 ISSUE A
Motorola Bipolar Power Transistor Device Data
9
MJH16006A
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Motorola Bipolar Power Transistor Device Data
*MJH16006A/D*
MJH16006A/D

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